to-220 -3l 1. base 2. collector 3. emitter jiangsu changjiang electron ics technology co., ltd to-220 -3l plastic-encapsulate transistors TIP41/41a/41b/41c transistor (npn) fea tures medium power linear switching applications maximum ratings (t a =25 unless otherwise noted) symbol para m eter t ip41 t ip41a tip 41b tip 41c unit v cbo collector-base voltage 40 60 80 100 v v ceo collector-emitter voltage 40 60 80 100 v v ebo emitter-base voltage 5 v i c collector current -continuous 6 a p c collector power dissipation 2 w t j junction temperature 150 t stg storage temperature range -55 ~ +150 electrical chara c teristics (t a =25 unless otherwise specified) parameter symbol test conditions m in m ax u nit collector-base breakdown voltage t i p41 tip4 1a TIP41b TIP41c v (br) cbo i c = 1ma, i e =0 40 60 80 100 v collector-emitter breakdown voltage TIP41 tip4 1 a TIP41b TIP41c v ceo (sus) i c = 30ma, i b =0 40 60 80 100 v emitter-base breakdown voltage v (br) ebo i e = 1ma, i c =0 5 v collector cut-off current TIP41 tip4 1a TIP41b TIP41c i cbo v cb =40v, i e =0 v cb =60v, i e =0 0.4 ma v cb =80v, i e =0 v cb =100v, i e =0 collector cut-off current TIP41/41a TIP41b/41c i ceo v ce = 30v, i b = 0 v ce = 60v, i b = 0 0.7 ma emitter cut-off current i ebo v eb =5v, i c =0 1 ma h fe(1) v ce = 4v, i c = 0.3a 30 dc current gain h fe(2) v ce =4 v, i c = 3a 15 75 collector-emitter saturation voltage v ce(sat) i c =6a, i b =0.6a 1.5 v base-emitter voltage v be(on ) v ce = 4v, i c =6a 2 v transition frequency f t v ce =10v , i c =0.5a f =1mhz 3 mh z www.cj-elec.com 1 d,nov,2014
0.1 1 10 10 100 1000 10000 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 100 1000 0 25 50 75 100 125 150 0 500 1000 1500 2000 2500 0.1 1 10 100 1000 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 100 1000 0.01 0.1 1 0.1 1 10 100 1000 10 100 012345 0 100 200 300 400 500 100 1000 1 10 100 capacitance c (pf) reverse voltage v (v) c ob c ib f=1mhz i e =0/i c =0 t a =25 v cb / v eb c ob / c ib 20 t a =1 0 0 t a =2 5 collcetor current i c (ma) base-emmiter voltage v be (v) i c v be common emitter v ce =4v collector power dissipation p c (mw) ambient temperature t a ( ) p c t a 6000 base-emitter saturation voltage v besat (v) collector current i c (ma) =10 t a =100 t a =25 i c v besat 6000 collector-emitter saturation voltage v cesat (v) collector current i c (ma) i c v cesat t a =100 t a =25 =10 6000 200 dc current gain h fe collector current i c (ma) 6000 common emitter v ce =4v t a =25 t a =100 i c h fe typical characterisitics TIP41/41a/41b/41c 6ma 5.4ma 4.8ma 4.2ma 3.6ma 3ma 2.4ma 1.8ma 1.2ma i b =0.6ma collector current i c (ma) collector-emitter voltage v ce (v) common emitter t a =25 static characteristic 50 transition frequency f t (mhz) collector current i c (ma) v ce =10v t a =25 i c f t www.cj-elec.com 2 d,nov,2014 typical characteristics
www.cj-elec.com 3 d,nov,2014 to-220-3l package outline dimensions m i n m ax m i n m ax a 4. 4 70 4. 67 0 0 . 17 6 0. 1 84 a 1 2 . 52 0 2 . 8 20 0. 0 99 0 . 11 1 b 0. 7 10 0. 91 0 0 . 02 8 0. 0 36 b1 1 . 17 0 1 . 3 70 0. 0 46 0 . 05 4 c 0. 3 10 0. 53 0 0 . 01 2 0. 0 21 c 1 1 . 17 0 1 . 3 70 0. 0 46 0 . 05 4 d 10 . 01 0 10 . 31 0 0 . 39 4 0. 4 06 e 8. 5 00 8. 90 0 0 . 33 5 0. 3 50 e 1 12 . 06 0 12 . 46 0 0 . 47 5 0. 4 91 e e1 4 . 98 0 5 . 1 80 0. 1 96 0 . 20 4 f 2. 5 90 2. 89 0 0 . 10 2 0. 1 14 h 0. 0 00 0. 30 0 0 . 00 0 0. 0 12 l 13 . 40 0 13 . 80 0 0 . 52 8 0. 5 43 l1 3 . 56 0 3 . 9 60 0. 1 40 0 . 15 6 3 . 73 5 3 . 9 35 0. 1 47 0 . 15 5 sy m bo l d im e n s io n s in m illim e t e r s d im e n s io n s in in c h e s 0. 10 0 t y p 2 . 54 0 t y p
|
